Efficiency-optimized near-field thermophotovoltaics using InAs and InAsSbP
نویسندگان
چکیده
Waste heat is a free and abundant energy source, with 15% of global total use existing as waste above 600 K. For 600–900 K temperature range, near-field thermophotovoltaics (NFTPVs) are theorized to be the most effective technology recycle into electrical power. However, date, experimental efficiencies have not exceeded 1.5%. In this work, we optimize efficiency three modeled InAs/InAsSbP-based room-temperature NFTPV devices positioned 0.1 μm from 750 p-doped Si radiator. We couple one-dimensional fluctuational electrodynamics model for near field optics two-dimensional drift-diffusion model, which validated by reproducing measured dark current–voltage curves two previously published InAs InAsSbP devices. The optimized show four six times higher above-bandgap transfer compared blackbody radiative limit, yielding enhanced power density, while simultaneously lowering parasitic sub-bandgap factors 0.68–0.85. Substituting front- back-surface layers 1.5- 1.4-times output, respectively, lowered diffusion currents. Of our designs, best performing device has double heterostructure an n–i–p doping order front back. radiator-thermophotovoltaic gaps 0.01–10 radiators within K, maximum 14.2% output 1.55 W/cm2, both at 900 Within always near- vs far-field illumination; calculate up 3.7- 107-times using transfer.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2022
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0116806